Tunneling and Short Channel Effects in Ultrascaled InGaAs Double Gate MOSFETs
نویسندگان
چکیده
منابع مشابه
Compact Modeling of Short Channel Double-Gate MOSFETs
Compact models of short channel effect in symmetric and asymmetric double gate MOSFETs are developed by solving two-dimensional (2-D) Poisson’s equation as a boundary value problem in the subthreshold region. The subthreshold current is obtained through the 2-D analytic potential distribution function. Threshold voltage rolloff, drain induced barrier lowering (DIBL) and subthreshold slope degra...
متن کاملSubthreshold current model for short-channel double-gate (DG) MOSFETs with vertical Gaussian doping profile
Abstract—This paper presents a short-channel subthreshold current model for the double gate (DG) MOSFET having Gaussian doping profile in the vertical direction of the channel. The present model is based on the assumption that diffusion is the dominant carrier transportation mechanism in the subthreshold regime of device operation. The effects of channel length and channel doping on subthresh...
متن کاملInvestigation of Multiple Material Gate Impact on Short Channel Effects and Reliability of Nanoscale SOI MOSFETs
In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material ...
متن کاملDrain Current Models for Single-Gate Mosfets & Undoped Symmetric & Asymmetric Double-Gate SOI Mosfets And Quantum Mechanical Effects: A Review
In this paper modeling framework for single gate conventional planar MOSFET and double gate (DG) MOSFETS are reviewed. MOS Modeling can be done by either analytical modeling or compact modeling. Single gate MOSFET technology has been the choice of mainstream digital circuits for VLSI as well as for other high frequency application in the low GHZ range. The major single gate MOS modeling methods...
متن کاملNumerical Simulation of Nanoscale Double-gate Mosfets
ABSTRACT The further improvement of nanoscale electron devices requires support by numerical simulations within the design process. After a briefly description of our 2D/3D-device simulator SIMBA, the results of the simulation of DG-MOSFETs are represented. Starting from a basic structure with a gate length of 30 nm, a calibration of model parameters was done based on measured values from liter...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2015
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2014.2383392